Modeling and simulation of heat transfer characteristics of 12-inch wafer on electrostatic chuck

• Published in: 2015 10th International Microsystems, Packaging, Assembly and Circuits Technology Conference (IMPACT) pp. 304 - 307
• Main Authors: Kuo-Chan Hsu, Jaw-Yen Yang, Jian-Zhang Chen, Yi-Hsiuan Yu, Yen-Ju Chen
• Format: Conference Proceeding
• Language: English
• Published: IEEE 01.10.2015
• Subjects: Aluminum nitride; Heat transfer; III-V semiconductor materials; Mathematical model; Plasma temperature; Semiconductor device modeling; Temperature distribution
• ISBN: 9781467396905; 1467396907
• DOI: 10.1109/IMPACT.2015.7365248

The content of this study observes the heat transfer characteristics of the wafer on the AlN and Al 2 O 3 electrostatic chuck (ESC), which were utilized under the various operational conditions, is studied for the potential improvement on the temperature uniformity of the 12-inch wafer. In addition, an identical study on the expanded chuck (299mm) is also carried out for a comparison of the original chuck (293mm). In addition, a good agreement with previous work was achieved and examined the reliability in this model system. It demonstrates the AlN chuck exhibits an excellent ability for the wafer cooling on the edge, but is unfavorable to the temperature uniformity. In contrast, Al 2 O 3 chuck is well capable of controlling the uniformity. While the original chuck are modified to the expanded chuck, it shows a contrastive results obtained in histogram with a standard deviation (SD), as an indicator of the temperature uniformity, as compared with that of the original chuck. The AlN expanded chuck plays a critical role on the SD which shows a more linear dependence than that of Al 2 O 3 one which becomes independent on the pressure of beyond 5 torr.