An electro-optic modulator with ultra-low residual amplitude modulation

Reduction of residual amplitude modulation (RAM) level induced by electro-optic modulation is important for frequency modulation (FM) technique to reach higher sensitivity. Here, we present a passive approach to make a well-designed electro-optic modulator (EOM) with ultra-low RAM. Although low RAM...

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Bibliographic Details
Published in2016 European Frequency and Time Forum (EFTF) pp. 1 - 3
Main Authors Zhaoyang Tai, Lulu Yan, Yanyan Zhang, Long Zhang, Haifeng Jiang, Shougang Zhang
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.04.2016
Subjects
Amplitude modulation
Crystals
electro-optic modulator (EOM)
Frequency conversion
Frequency measurement
Frequency modulation
passive
PDH
Phase modulation
Random access memory
residual amplitude modulation (RAM)
ultra-stable laser
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Summary:Reduction of residual amplitude modulation (RAM) level induced by electro-optic modulation is important for frequency modulation (FM) technique to reach higher sensitivity. Here, we present a passive approach to make a well-designed electro-optic modulator (EOM) with ultra-low RAM. Although low RAM could be achieved by critical actively controls of temperature and voltage of a common EOM. This passive approach is more simple, reliable and easier to be realized. We evaluate performance of such an EOM by comparing system noise level of a standard PDH frequency-stabilization system using this EOM with a commercial one with the addition of a good quality polarizer. RAM depth (versus phase modulation (PM) depth) of this EOM is at 10−6 level. Frequency instability induced by this EOM is below 1×10−16 @ 1s, which is more than one order lower than the other.
DOI:10.1109/EFTF.2016.7477791