28nm Metal Hard Mask etch process development

Metal Hard Mask (MHM)-All In One (AIO) technology has been widely used in the process flow of copper inter-connect since 28 nm technology node and below. This is because AF immersion exposure technology reaches its limitation for line edge roughness control, photoresist (PR) thickness and profile co...

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Published in2015 China Semiconductor Technology International Conference pp. 1 - 5
Main Authors Zhang, Liyan, Gai, Chenguang, Ren, Hongrui, Huang, Jun, Zhang, Xu, Pen, Shugen, Zhang, Yu, Ge, Qiang
Format Conference Proceeding Journal Article
LanguageEnglish
Published IEEE 01.03.2015
Subjects
Etching
Irrigation
Lithography
Masks
Microscopy
Optimization
Photoresists
Roughness
Semiconductors
Tin
Variability
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Summary:Metal Hard Mask (MHM)-All In One (AIO) technology has been widely used in the process flow of copper inter-connect since 28 nm technology node and below. This is because AF immersion exposure technology reaches its limitation for line edge roughness control, photoresist (PR) thickness and profile control. In this paper, we described the issues and the solutions in the development of 28 nm node MHM etch process, including selectivity improvement for photoresist, optimization of line edge roughness (LER), and optimization of TiN profile & CD uniformity. Base on fundamental etch theory, several experiments were conducted, and we successfully achieved TiN with desired profile and CD with good uniformity for 28nm MHM process.
Bibliography:ObjectType-Article-2
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SourceType-Conference Papers & Proceedings-2
ISSN:2158-2297
2158-2297
DOI:10.1109/CSTIC.2015.7153376