Ultra fine-pitch TSV technology for ultra-dense high-Q RF inductors

We demonstrate that fine-pitch TSV technology can be exploited to fabricate micro-inductors on high resistivity substrate, with record-high inductance per area and preserving their performance at GHz frequencies. We report an extensive experimental study on the effects of dimensional scaling and pas...

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Bibliographic Details
Published in2015 Symposium on VLSI Technology (VLSI Technology) pp. T52 - T53
Main Authors Vitale, Wolfgang A., Fernandez-Bolanos, Montserrat, Klumpp, Armin, Weber, Josef, Ramm, Peter, Ionescu, Adrian M.
Format Conference Proceeding Journal Article
LanguageEnglish
Published JSAP 01.06.2015
Subjects
3D integration
Capacitors
Density
Electrical resistivity
Inductance
Inductors
out-of-plane inductors
Quality factor
Radio frequency
RFIC
Substrates
Tanks
Three-dimensional displays
Through-silicon vias
TSV
Wideband
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Summary:We demonstrate that fine-pitch TSV technology can be exploited to fabricate micro-inductors on high resistivity substrate, with record-high inductance per area and preserving their performance at GHz frequencies. We report an extensive experimental study on the effects of dimensional scaling and passive device density on RF performance of out-of-plane inductors exploiting W-based TSVs, with pitches down to 10 μm. We show wideband RF inductors with an unprecedented combination of a quality factor peak of 7.8 at 13 GHz, self-resonance frequency of 29.2 GHz, and inductance density of 124.4 nH/mm 2 . The reported technology also includes low loss interconnects, fixed capacitors and LC tanks, design to serving high performance 3D-integrated RF functionalities.
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ISSN:0743-1562
2158-9682
DOI:10.1109/VLSIT.2015.7223700