A novel power LDMOSFET structure with high breakdown voltage

Novel power MOSFET structure based on LD-MOSFET which has no epitaxial layer is proposed in this paper. The proposed device has the breakdown voltage (BV) as 3.5 times higher than conventional LDMOSFET without increasing the resistance. Also, under the influence of wide n-drift around the oxide, it...

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Bibliographic Details
Published in2014 International Conference on Electronics, Information and Communications (ICEIC) pp. 1 - 2
Main Authors Doohyung Cho, Gwanhoon Song, Kwangsoo Kim
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.01.2014
Subjects
Electric fields
Epitaxial growth
Epitaxial layers
LDMOSFET
Logic circuits
MOSFET
No epitaxial
Performance evaluation
R on.sp
Substrates
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Summary:Novel power MOSFET structure based on LD-MOSFET which has no epitaxial layer is proposed in this paper. The proposed device has the breakdown voltage (BV) as 3.5 times higher than conventional LDMOSFET without increasing the resistance. Also, under the influence of wide n-drift around the oxide, it achieves relatively high I sat due to uniform electric field distribution. In this paper, Silvaco T-CAD tool is utilized to analyze the each device's electrical characteristics.
DOI:10.1109/ELINFOCOM.2014.6914418