Effects of contact roughness and trapped free space on characteristics of RF-MEMS capacitive shunt switches

Dielectric surface roughness and top electrode metal asperities tend to affect both the life-time reliability and frequency response of RF MEMS capacitive shunt switches. Down-state (off) capacitance of these switches is considerably affected by interface irregularities and trapped free space. There...

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Bibliographic Details
Published in2015 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC) pp. 721 - 725
Main Authors Nejad, Ali Ghaffari, Hasani, Javad Yavand
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.06.2015
Subjects
Conferences
Decision support systems
Electron devices
Hafnium
RF-MEMS
Roughness Parameters
Self-affine fractals
Shunt Switch
Solid state circuits
Surface irregularities
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Summary:Dielectric surface roughness and top electrode metal asperities tend to affect both the life-time reliability and frequency response of RF MEMS capacitive shunt switches. Down-state (off) capacitance of these switches is considerably affected by interface irregularities and trapped free space. There exists two very contradictory concepts regarding theoretically completely conformal Metal-Insulator-Metal contacts and commercially available RF MEMS capacitive switches. We explained the sole source of this contradiction, and offered a new model that is more accurate to describe RF MEMS switches. With this model we consider the effects of both contact roughness and free space trapped in down-state capacitance. Using the proposed model, different switch characteristics like frequency response and capacitance ratio is evaluated.
ISBN:9781479983629
1479983624
DOI:10.1109/EDSSC.2015.7285218