A high temperature wideband low noise amplifier for downhole applications

As the oil industry continues to drill deeper to reach new wells, electronics are required to operate at extreme pressures and temperatures. Coupled with substantial real-time data targets, the need for robust high speed electronics is quickly on the rise. This paper presents a high temperature wide...

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Bibliographic Details
Published in2016 IEEE International Symposium on Circuits and Systems (ISCAS) pp. 938 - 941
Main Authors Cunningham, Michael L., Ha, Dong S., Kwang-Jin Koh
Format Conference Proceeding Journal Article
LanguageEnglish
Published IEEE 01.05.2016
Subjects
Amplification
Communication systems
Downhole communications system
Electronics
Extreme environment
Gain
Gallium nitride
GaN on SiC
High temperature
Low noise
Low nosie amplifier
Noise levels
Noise measurement
Radio frequency
Reliability
Silicon carbide
Temperature
Temperature measurement
Wideband
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Summary:As the oil industry continues to drill deeper to reach new wells, electronics are required to operate at extreme pressures and temperatures. Coupled with substantial real-time data targets, the need for robust high speed electronics is quickly on the rise. This paper presents a high temperature wideband low noise amplifier (LNA) with zero temperature coefficient maximum available gain (ZTCMAG) biasing for a downhole communication system. The proposed LNA is designed and prototyped using 0.25 μm GaN on SiC RF transistor technology, which is chosen due to the high junction temperature capability. Measurements show that the proposed LNA can operate reliably up to an ambient temperature of 230 C with a minimum noise figure (NF) of 2.0 dB, average gain of 16.1 dB, and input P1dB of 4.0 dBm from 230.5-285.5 MHz. The maximum variation with temperature from 25°C to 230°C is 1.53 dB for NF and 0.65 dB for gain.
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ISSN:2379-447X
DOI:10.1109/ISCAS.2016.7527396