The Statistical Evaluation of Correlations between LRS and HRS Relaxations in RRAM Array

The unique tail bits retention failure behavior is observed in the RRAM array. Unlike the previous reports on single device or the average value''s retention behavior, quick retention loss of tail bits is found for both LRS and HRS. By statistically characterized such relaxation effect of...

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Bibliographic Details
Published in2016 IEEE 8th International Memory Workshop (IMW) pp. 1 - 4
Main Authors Chen Wang, Huaqiang Wu, Bin Gao, Lingjun Dai, Dong Wu, He Qian, Sekar, Deepak C., Zhichao Lu, Bronner, Gary
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.05.2016
Subjects
Arrays
Correlation
Hafnium compounds
Ions
Optimization
Reliability
Resistance
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Summary:The unique tail bits retention failure behavior is observed in the RRAM array. Unlike the previous reports on single device or the average value''s retention behavior, quick retention loss of tail bits is found for both LRS and HRS. By statistically characterized such relaxation effect of tail bits, physical models are built to quantitatively describe the relaxation behaviors of LRS and HRS. The correlation between LRS and HRS relaxations is explored. Interfacial migration of oxygen ions is clarified to be the possible reason for the relaxation, which can provide the basis of the optimization of retention properties in RRAM array.
DOI:10.1109/IMW.2016.7495291