Design and realisation of a pHEMT diode MMIC power limiter using 3D GaAs multilayer CPW technology

We report for the first time, the design and realization of a MMIC power limiter based on (0.5 × 200) μm 2 pHEMT Schottky diodes using an in-house 3D GaAs multilayer CPW technology. The system of three layers of conductor metals and two layers of sandwich polyimide as dielectric was employed. The li...

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Bibliographic Details
Published in2015 European Microwave Conference (EuMC) pp. 522 - 525
Main Authors Kyabaggu, Peter B. K., Haris, Norshakila, Rezazadeh, Ali A., Sinulingga, Emerson, Alim, Mohammad A., Zhang, Yongjian
Format Conference Proceeding
LanguageEnglish
Published EuMA 01.09.2015
Subjects
Coplanar waveguides
Gallium arsenide
MMICs
multilayer
Nonhomogeneous media
pHEMT
PHEMTs
power limiter
schottky diode
Schottky diodes
Transmission line measurements
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Summary:We report for the first time, the design and realization of a MMIC power limiter based on (0.5 × 200) μm 2 pHEMT Schottky diodes using an in-house 3D GaAs multilayer CPW technology. The system of three layers of conductor metals and two layers of sandwich polyimide as dielectric was employed. The limiter design consists of a 50Ω V-shaped coplanar waveguide transmission line connected to a pair of shunt GaAs pHEMT diodes. Measured on-wafer S-parameter data demonstrates a maximum small signal insertion loss of less than 2 dB from 50 MHz to 3 GHz and a return loss better than 7.5 dB.
DOI:10.1109/EuMC.2015.7345815