Silicon epitaxy by low-temperature RF-PECVD using SiF4/H2/Ar gas mixtures for emitter formation in crystalline solar cells

This paper describes ongoing studies on the emitter formation by PECVD (Plasma Enhanced Chemical Vapor Deposition) using SiF 4 /H 2 /Ar chemistry in crystalline silicon solar cells. H 2 depletion and ion bombardment have been highlighted to be crucial factors to sustain epitaxial growth. By controll...

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Bibliographic Details
Published in2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC) pp. 1 - 5
Main Authors Leal, Ronan, Dornstetter, Jean-Christophe, Haddad, Farah, Poulain, Gilles, Maurice, Jean-Luc, Cabarrocas, Pere Roca I.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.06.2015
Subjects
Electrodes
Energy measurement
epitaxial emitter
Epitaxial growth
epitaxy
Hafnium
Indexes
low temperature
PECVD
Process control
SiF4
Substrates
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Summary:This paper describes ongoing studies on the emitter formation by PECVD (Plasma Enhanced Chemical Vapor Deposition) using SiF 4 /H 2 /Ar chemistry in crystalline silicon solar cells. H 2 depletion and ion bombardment have been highlighted to be crucial factors to sustain epitaxial growth. By controlling these parameters we have been able to produce a 2.5μm-thick high-quality silicon epitaxy and to define a process window. Structural properties were assessed by in-situ and exsitu spectroscopic ellipsometry as well by HR-TEM (High Resolution Transmission Electron Microscopy) images with the diffraction patterns. These studies have been extended to n-type and p-type doped layers.
DOI:10.1109/PVSC.2015.7356052