Application-specific optimization of optical sensors based on single-photon avalanche diodes

In recent years, various developments have advanced the field of optical sensors based on single-photon avalanche diodes. In this contribution we present two sensors that were designed in 0.35μm CMOS technology. A silicon photomultiplier achieves a fill factor of 68 % at 50 μm pixel pitch and allows...

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Bibliographic Details
Published in2015 11th Conference on Ph.D. Research in Microelectronics and Electronics (PRIME) pp. 306 - 309
Main Authors Schwinger, Alexander, Bechen, Benjamin, Nitta, Christian, Hosticka, Bedrich J., Kokozinski, Rainer
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.06.2015
Subjects
CMOS integrated circuits
Geometry
Photonics
Sensor phenomena and characterization
silicon photomultiplier (SiPM)
single-photon avalanche diode (SPAD)
Temperature dependence
Temperature measurement
time gating
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Summary:In recent years, various developments have advanced the field of optical sensors based on single-photon avalanche diodes. In this contribution we present two sensors that were designed in 0.35μm CMOS technology. A silicon photomultiplier achieves a fill factor of 68 % at 50 μm pixel pitch and allows improved functionality by cointegration of application-specific readout electronics. A time-gated line sensor with gating times down to 1.5ns and serial digital output was designed based on optimized pixel geometry suitable for spectroscopy applications. Planned further improvements of sensors based on single-photon avalanche diode technology, including on-chip temperature compensation, are presented.
DOI:10.1109/PRIME.2015.7251396