Practical process flows for monolithic 3D
Three approaches to obtain monolithic 3D logic ICs are presented in this paper. RCAT - Process the high temperature on a generic structure prior to layer transfer (LT), and finish with cold processes; i.e., etch & depositions. Gate Replacement (Gate Last HKMG) - Process the high temperature on a...
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Published in | 2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S) pp. 1 - 2 |
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Main Author | |
Format | Conference Proceeding |
Language | English |
Published |
IEEE
01.10.2013
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Subjects | |
Online Access | Get full text |
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Summary: | Three approaches to obtain monolithic 3D logic ICs are presented in this paper. RCAT - Process the high temperature on a generic structure prior to layer transfer (LT), and finish with cold processes; i.e., etch & depositions. Gate Replacement (Gate Last HKMG) - Process the high temperature on a repeating structure prior to LT, and finish with `gate replacement' cold processes. Laser Annealing - Use short laser pulses to locally heat and anneal the top layer while protecting the interconnection layers below from the topside heat. These approaches utilize well-known and manufacturing-friendly materials, process steps and device structures. |
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ISSN: | 1078-621X 2577-2295 |
DOI: | 10.1109/S3S.2013.6716512 |