High voltage LDMOSFET modeling using BSIM6 as intrinsic-MOS model

Here, we report high voltage MOSFET modeling using BSIM6 model. The model has two components - intrinsic MOSFET channel of LDMOS modeled by BSIM6 and a drift region modeled by non-linear drift resistance. BSIM6 is the next generation bulk MOSFET model in BSIM family of models. It also have the model...

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Bibliographic Details
Published in2013 IEEE Asia Pacific Conference on Postgraduate Research in Microelectronics and Electronics (PrimeAsia) pp. 56 - 61
Main Authors Sahoo, Jyoti Ranjan, Agarwal, Harshit, Yadav, Chandan, Kushwaha, Pragya, Khandelwal, Sourabh, Gillon, Renaud, Chauhan, Yogesh Singh
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.12.2013
Subjects
BSIM6
Data models
Drift Resistance
Immune system
Lateral Double-Diffused MOS (LDMOS)
Logic gates
MOSFET
Resistance
Self heating Effect
Semiconductor device modeling
Semiconductor process modeling
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Summary:Here, we report high voltage MOSFET modeling using BSIM6 model. The model has two components - intrinsic MOSFET channel of LDMOS modeled by BSIM6 and a drift region modeled by non-linear drift resistance. BSIM6 is the next generation bulk MOSFET model in BSIM family of models. It also have the model of Self Heating Effect (SHE) which is very important for high power devices like LDMOS. This model shows good behaviour over wide range of gate and drain bias conditions including convergence. Some of the effects like Quasi-saturation, self-heating and impact ionization are modelled by the combination of BSIM6 and drift-resistance models. We have validated this model on the simulated characteristics generated by TCAD and then, on the measured characteristics of a LDMOS device, where it shows excellent accuracy over entire bias range.
ISSN:2159-2144
2159-2160
DOI:10.1109/PrimeAsia.2013.6731178