Progress of THz quantum cascade laser using nitride semiconductor

We demonstrate the first lasing operation of GaN-based quantum cascade lasers (QCLs). Nitride semiconductor is a material having a potential for realizing wide QCL frequency range including unexplored frequency from 5 to 12 THz, as well as realizing room temperature operation. We fabricated GaN/AlGa...

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Bibliographic Details
Published in2016 74th Annual Device Research Conference (DRC) pp. 1 - 2
Main Authors Hirayama, H., Terashima, W., Toyoda, S., Kamata, N.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.06.2016
Subjects
Aluminum gallium nitride
MOCVD
Molecular beam epitaxial growth
Quantum cascade lasers
Substrates
Wide band gap semiconductors
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Summary:We demonstrate the first lasing operation of GaN-based quantum cascade lasers (QCLs). Nitride semiconductor is a material having a potential for realizing wide QCL frequency range including unexplored frequency from 5 to 12 THz, as well as realizing room temperature operation. We fabricated GaN/AlGaN THz-QCLs with novel pure-3-level design active region by molecular beam epitaxy (MBE). A 5.4 THz lasing was obtained from the QCL measured at 5.6K. We also obtained 6.97 THz lasing of the QCL fabricated by metal-organic chemical vapor deposition (MOCVD).
DOI:10.1109/DRC.2016.7548488