Progress of THz quantum cascade laser using nitride semiconductor
We demonstrate the first lasing operation of GaN-based quantum cascade lasers (QCLs). Nitride semiconductor is a material having a potential for realizing wide QCL frequency range including unexplored frequency from 5 to 12 THz, as well as realizing room temperature operation. We fabricated GaN/AlGa...
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Published in | 2016 74th Annual Device Research Conference (DRC) pp. 1 - 2 |
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Main Authors | , , , |
Format | Conference Proceeding |
Language | English |
Published |
IEEE
01.06.2016
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Subjects | |
Online Access | Get full text |
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Summary: | We demonstrate the first lasing operation of GaN-based quantum cascade lasers (QCLs). Nitride semiconductor is a material having a potential for realizing wide QCL frequency range including unexplored frequency from 5 to 12 THz, as well as realizing room temperature operation. We fabricated GaN/AlGaN THz-QCLs with novel pure-3-level design active region by molecular beam epitaxy (MBE). A 5.4 THz lasing was obtained from the QCL measured at 5.6K. We also obtained 6.97 THz lasing of the QCL fabricated by metal-organic chemical vapor deposition (MOCVD). |
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DOI: | 10.1109/DRC.2016.7548488 |