Oxygen-inserted SegFET: A candidate for 10-nm node system-on-chip applications

An oxygen-inserted quasi-planar segmented channel MOSFET design is proposed and studied for monolithic system-on-chip applications. Projections indicate that it will provide for higher performance than bulk FinFET technology at the 10 nm node, due to higher field-effect carrier mobility, lower sourc...

Full description

Saved in:
Bibliographic Details
Published in2014 Silicon Nanoelectronics Workshop (SNW) pp. 1 - 2
Main Authors Nuo Xu, Takeuchi, Hideki, Damrongplasit, Nattapol, Stephenson, Robert J., Hytha, Marek, Cody, Nyles, Mears, Robert J., Liu, Tsu-Jae King
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.06.2014
Subjects
Cutoff frequency
Doping
FinFETs
Logic gates
Performance evaluation
Silicon
Online AccessGet full text

Cover

More Information
Summary:An oxygen-inserted quasi-planar segmented channel MOSFET design is proposed and studied for monolithic system-on-chip applications. Projections indicate that it will provide for higher performance than bulk FinFET technology at the 10 nm node, due to higher field-effect carrier mobility, lower source/drain series resistance, and the benefit of super-steep retrograde well punchthrough-stopper doping.
ISBN:9781479956760
1479956767
DOI:10.1109/SNW.2014.7348549