250-nm emitting LED optimized for optical fibre coupling

In this study we report the growth, fabrication and packaging of AlGaN-based light emitting diodes (LEDs) operating at 250 nm for space application [ 1 ]. The device fabrication and packaging processes were optimized to ensure a reliable optical fibre coupling. Electrical and optical characterizatio...

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Bibliographic Details
Published in2015 IEEE Summer Topicals Meeting Series (SUM) pp. 177 - 178
Main Authors Pampili, Pietro, Akhter, Mahbub, Eason, Cormac, Zubialevich, Vitaly Z., Maaskant, Pleun P., Zhiheng Quan, O'Brien, Peter, Corbett, Brian, Parbrook, Peter J.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.07.2015
Subjects
Aluminum gallium nitride
Aluminum nitride
Couplings
Fabrication
III-V semiconductor materials
Light emitting diodes
Substrates
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Summary:In this study we report the growth, fabrication and packaging of AlGaN-based light emitting diodes (LEDs) operating at 250 nm for space application [ 1 ]. The device fabrication and packaging processes were optimized to ensure a reliable optical fibre coupling. Electrical and optical characterization is presented and discussed; in particular a four-fold increase of the integrated ultraviolet power is demonstrated compared with a non-optimized device. A potential expansion of this approach to InAlN-based devices will also be discussed.
ISSN:1099-4742
2376-8614
DOI:10.1109/PHOSST.2015.7248253