Noise spectroscopy studies of GaAs/AlGaAs hall devices for optimizing micro- and nano-scale magnetic measurements

We report on a comprehensive characterization of the fluctuation properties of micro-Hall magnetometers based on a two-dimensional electron system (2DES) in δ-doped GaAs/AlGaAs semiconductor heterostructures. The analysis of the temperature- and frequency-dependent noise in a simple model of non-exp...

Full description

Saved in:
Bibliographic Details
Published in2015 International Conference on Noise and Fluctuations (ICNF) pp. 1 - 4
Main Authors Muller, J., Korbitzer, B., Amyan, A., Pohlit, M., Ohno, Y., Ohno, H.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.06.2015
Subjects
1/f noise
2DEG in GaAs/AlGaAs heterostructures
DX centers
Fluctuations
Gallium arsenide
Magnetometers
micro-Hall magnetometry
Noise
Resistance
Temperature dependence
Temperature distribution
Online AccessGet full text

Cover

More Information
Summary:We report on a comprehensive characterization of the fluctuation properties of micro-Hall magnetometers based on a two-dimensional electron system (2DES) in δ-doped GaAs/AlGaAs semiconductor heterostructures. The analysis of the temperature- and frequency-dependent noise in a simple model of non-exponential kinetics reveals a distribution of activation energies for the 1/f α -type fluctuations. In addition to the 1/f-noise, two-level fluctuators with distinct energies are observed. We identify deep donor levels in AlGaAs (DX centers) as the predominant source of 1/f-noise and discuss the effect of the corresponding energy signature of these defect levels on the device performance in different temperature regimes, where we find an extremely low noise level at temperatures below ~ 100 K and above ~ 200 K.
DOI:10.1109/ICNF.2015.7288544