Sub-ppm level NO2 sensor with sulfur doped graphene

High sensitive NO 2 sensors working at different temperatures using sulfur doped graphene were announced in this paper. The graphene was doped by introducing hydrogen sulfide gas flow as sulfur source at 1000°C in CVD after its transfer on a Si substrate with 300 nm thick SiO 2 layer through PMMA co...

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Bibliographic Details
Published in2016 Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS (DTIP) pp. 1 - 4
Main Authors Lianfeng Guo, Chen Liang, Yuelin Wang, Tie Li
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.05.2016
Subjects
Doping
Electrodes
Graphene
nitrogen dioxide
reversibility
Sensitivity
Substrates
Sulfur
Sulfur-doping
Temperature sensors
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Summary:High sensitive NO 2 sensors working at different temperatures using sulfur doped graphene were announced in this paper. The graphene was doped by introducing hydrogen sulfide gas flow as sulfur source at 1000°C in CVD after its transfer on a Si substrate with 300 nm thick SiO 2 layer through PMMA coating method. The sensitivity of our S-doped graphene (SG) sensors varied with temperature from 70°C to 150°C. Although the sensitivity was not the best at 150°C, it still distinguished itself with shortest recovery time and the estimated detection limit of 50 ppb, which revealing a potential use in further detection of NO 2 with low cost and high sensitivity.
DOI:10.1109/DTIP.2016.7514892