Variable-length gateless transistor for analog one-time-programmable memory applications
This work presents a novel embedded Analog Gateless One-Time-Programming Memory (AG-OTP), implemented by standard CMOS logic process. The NVM cell includes a gateless storage node in series with a select transistor; where the charge stored on the parasitic ONO structure. The p-channel device is prog...
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Published in | 2016 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) pp. 1 - 2 |
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Main Authors | , , , , |
Format | Conference Proceeding |
Language | English |
Published |
IEEE
01.04.2016
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Subjects | |
Online Access | Get full text |
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