Temperature dependences of conductivity in undoped and doped poly-Si thin films grown on YSZ crystallization-induction layers by two-step irradiation method with pulsed laser

Conductivities of Si thin films crystallized in solid phase with/without YSZ layers by the two-step method with pulsed laser were investigated. The temperature dependences were also measured for both undoped and P-doped films using AC Hall effect measurement. It was found that the Si/YSZ/glass struc...

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Bibliographic Details
Published in2015 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD) pp. 225 - 226
Main Authors Mai Lien Thi Kieu, Horita, Susumu
Format Conference Proceeding
LanguageEnglish
Published JSAP 01.07.2015
Subjects
Conductivity
Crystallization
Glass
Hall effect
Silicon
Temperature measurement
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Summary:Conductivities of Si thin films crystallized in solid phase with/without YSZ layers by the two-step method with pulsed laser were investigated. The temperature dependences were also measured for both undoped and P-doped films using AC Hall effect measurement. It was found that the Si/YSZ/glass structure exhibited higher conductivities than those of the Si/glass. This suggested that the Si film crystallized on the YSZ layer is more suitable for application of electronic devices, compared with the Si film on glass.
DOI:10.1109/AM-FPD.2015.7173249