Numerical analysis for thermal field of susceptor in MOCVD reactor

• Published in: 2015 China Semiconductor Technology International Conference pp. 1 - 3
• Main Authors: Kuo-Hung Ho, Chih-Kai Hu, Li, Tomi T.
• Format: Conference Proceeding Journal Article
• Language: English
• Published: IEEE 01.03.2015
• Subjects: Coatings; Conferences; Graphite; Heating; Inductors; MOCVD; Reactors; Semiconductors; SiC susceptor; Silicon carbide; temperature uniformity; Variability; Wall temperature
• DOI: 10.1109/CSTIC.2015.7153470
• ISSN: 2158-2297

A MOCVD process requires not only high heating efficiency, but also good temperature uniformity on susceptor surface. The most common material of susceptor is graphite, but the heating lifetime is very short. Instead, this work uses the SiC as susceptor material. It enhances both the lifetime and thermal conductivity. In the meantime, we also change the shape and structure of susceptor to improve the temperature uniformity on the surface. In addition, the gas flow rate and wall temperature will affect the temperature uniformity thus the analysis of thermal flow field is also included. By using above methods, the temperature uniformity of susceptor can improve about 45%.