Numerical analysis for thermal field of susceptor in MOCVD reactor

A MOCVD process requires not only high heating efficiency, but also good temperature uniformity on susceptor surface. The most common material of susceptor is graphite, but the heating lifetime is very short. Instead, this work uses the SiC as susceptor material. It enhances both the lifetime and th...

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Bibliographic Details
Published in2015 China Semiconductor Technology International Conference pp. 1 - 3
Main Authors Kuo-Hung Ho, Chih-Kai Hu, Li, Tomi T.
Format Conference Proceeding Journal Article
LanguageEnglish
Published IEEE 01.03.2015
Subjects
Coatings
Conferences
Graphite
Heating
Inductors
MOCVD
Reactors
Semiconductors
SiC susceptor
Silicon carbide
temperature uniformity
Variability
Wall temperature
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Summary:A MOCVD process requires not only high heating efficiency, but also good temperature uniformity on susceptor surface. The most common material of susceptor is graphite, but the heating lifetime is very short. Instead, this work uses the SiC as susceptor material. It enhances both the lifetime and thermal conductivity. In the meantime, we also change the shape and structure of susceptor to improve the temperature uniformity on the surface. In addition, the gas flow rate and wall temperature will affect the temperature uniformity thus the analysis of thermal flow field is also included. By using above methods, the temperature uniformity of susceptor can improve about 45%.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Conference-1
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SourceType-Conference Papers & Proceedings-2
ISSN:2158-2297
2158-2297
DOI:10.1109/CSTIC.2015.7153470