Recent progress on high-efficiency CMOS and SiGe RF power amplifier design

The majority of the world's RF wireless power amplifiers (PA) products are still designed in III-V semiconductors today. However, by taking advantage of nm silicon devices and novel RF system-on-a-chip (SoC) design techniques, several groups have recently reported highly-competitive silicon RF...

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Bibliographic Details
Published in2016 IEEE Topical Conference on Power Amplifiers for Wireless and Radio Applications (PAWR) pp. 15 - 17
Main Authors Lie, Donald Y. C., Tsay, Jerry, Hall, Travis, Nukala, Teja, Lopez, Jerry, Yan Li
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.01.2016
Subjects
Broadband communication
CMOS integrated circuits
CMOS PA
Digital PA (DPA)
Envelope-tracking (ET)
ET-PA
Internet-of-Thing (IoT)
power amplifier (PA)
Radio frequency
SiGe PA
Silicon
Silicon germanium
stacked-FET PA
Wireless communication
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Summary:The majority of the world's RF wireless power amplifiers (PA) products are still designed in III-V semiconductors today. However, by taking advantage of nm silicon devices and novel RF system-on-a-chip (SoC) design techniques, several groups have recently reported highly-competitive silicon RF PAs in both CMOS and SiGe BiCMOS technologies with performance rivaling those of the III-V RF PAs. We will, therefore, present an up-to-date review on recent design trends of silicon-based PAs, with the focus on high-efficient broadband wireless and 5G PA design.
DOI:10.1109/PAWR.2016.7440130