Polarization-field hysteresis loop characteristic of nanostructured ZnO/MgO bilayer film based-MFIM capacitor

This research work investigates the ferroelectric characteristic of nanostructured ZnO/MgO bilayer based MFIM capacitor. The low leakage current (10 -8 A.cm -2 ) of nanostructured ZnO/MgO bilayer films were observed for all annealed bilayer films. Nanostructured ZnO/MgO bilayer film annealed at 475°...

Full description

Saved in:
Bibliographic Details
Published in2015 IEEE Student Conference on Research and Development (SCOReD) pp. 643 - 648
Main Authors Habibah, Z., Zainal, N. B., Ismail, L. N., Wahid, M. H., Rozana, M. D., Mamat, M. H., Rusop, M.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.12.2015
Subjects
Annealing
Capacitors
Conductivity
ferrolectrics
hysteresis loop
Insulators
Leakage currents
Polarization-Field
PVDF-TrFE
ZnO/MgO bilayer film
Online AccessGet full text

Cover

More Information
Summary:This research work investigates the ferroelectric characteristic of nanostructured ZnO/MgO bilayer based MFIM capacitor. The low leakage current (10 -8 A.cm -2 ) of nanostructured ZnO/MgO bilayer films were observed for all annealed bilayer films. Nanostructured ZnO/MgO bilayer film annealed at 475°C was then utilized as insulator (dielectric) layer in the fabrication of MFIM capacitor due to its high resistivity (7.15×10 4 Ω.cm) and low leakage current density (10 -8 A.cm -2 ). The optimized nanostructured ZnO/MgO bilayer film was proven to act as a stable buffer layer for the PVDF-TrFE in where the P-E loop can withstand for the applied voltage up to 190V. The polarization-field (P-E) hysteresis revealed high electrical strength of ZnO/MgO/PVDF-TrFE MFIM capacitor.
DOI:10.1109/SCORED.2015.7449417