Simulation and experimental results of 3.3kV cross switch “Si-IGBT and SiC-MOSFET” hybrid

• Published in: 2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD) pp. 163 - 166
• Main Authors: Vemulapati, Umamaheswara Reddy, Mihaila, Andrei, Minamisawa, Renato Amaral, Canales, Francisco, Rahimo, Munaf, Papadopoulos, Charalampos
• Format: Conference Proceeding Journal Article
• Language: English
• Published: IEEE 01.06.2016
• Subjects: Computer simulation; Current sharing; Density measurement; Devices; Gates; Hybrid Switch; IGBT; Insulated gate bipolar transistors; Logic gates; MOSFET; Power semiconductor devices; Power Semiconductors; Silicon Carbide Switch; Silicon Switch; Simulation; Stress; Switches; Switching; Voltage control; XS-Hybrid
• ISSN: 1946-0201
• DOI: 10.1109/ISPSD.2016.7520803

In this work we present the simulation and experimental results of the "Cross Switch (XS)-Hybrid" built with 3.3kV Si-IGBTs and SiC-MOSFETs. We have analyzed the switching performance, mainly the turn-off behavior of the XS-Hybrid (a parallel arrangement of a Si-IGBT and a SiC-MOSFET) with the aid of Sentaurus TCAD device simulations. We discuss in detail the current sharing mechanism between these two devices and hence the distribution of the turn-off losses and the stress (peak power density, dynamic avalanche) on the devices during switching. In addition, we have investigated the turn-off behavior of the XS-Hybrid by variation of the area ratio between the Si-IGBT and SiC-MOSFET, variation of the gate resistance, and variation of the gate resistance ratio. To investigate the switching behavior of the XS-Hybrid, first the simulation models have been adjusted to match the experimental results of the 3.3kV Si-IGBT and SiC-MOSFET. Furthermore, the simulation and experimental results of the 3.3kV XS-Hybrid are compared with the full 3.3kV Si-IGBT and full 3.3kV SiC-MOSFET reference devices.