Depth resolved preferential orientation of Cu(In,Ga)Se2 thin films based on the 112 peak model

X-ray diffraction is a commonly used technique to characterize the Cu(In,Ga)Se 2 thin films. It allows to derive information on the pureness of deposited layers, their preferential orientation and a degree of crystallization. In this work we present a detailed analysis of the shape of a very charact...

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Published in2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC) pp. 1 - 5
Main Authors Drobiazg, Tomasz, Arzel, Ludovic, Barreau, Nicolas, Zabierowski, Pawel
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.06.2015
Subjects
Absorption
Gallium
Indium
Mathematical model
modeling
photovoltaic cells
Shape
thin films
X-ray diffraction
X-ray scattering
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Summary:X-ray diffraction is a commonly used technique to characterize the Cu(In,Ga)Se 2 thin films. It allows to derive information on the pureness of deposited layers, their preferential orientation and a degree of crystallization. In this work we present a detailed analysis of the shape of a very characteristic 112 peak and its dependence on the compositional profile of indium and gallium. Contrary to standard X-ray analysis we go one step further and from the comparison of calculated and measured 112 peaks we are able to determine the evolution of preferential orientation along the thickness of Cu(In,Ga)Se 2 thin film.
DOI:10.1109/PVSC.2015.7356102