Over 10 a operation with switching characteristics of 1.2 kV-class vertical GaN trench MOSFETs on a bulk GaN substrate

In this paper, we demonstrate 1.2 kV-class vertical GaN trench MOSFETs fabricated on a bulk GaN substrate with high current and switching operations. The fabricated multi-cell MOSFET achieved a blocking voltage of 1.3 kV by using a field-plate edge termination around an isolation mesa. The MOSFET ch...

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Published in2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD) pp. 459 - 462
Main Authors Oka, Tohru, Ina, Tsutomu, Ueno, Yukihisa, Nishii, Junya
Format Conference Proceeding Journal Article
LanguageEnglish
Published IEEE 01.06.2016
Subjects
bulk GaN substrates
Current measurement
Electrodes
Gallium nitride
Gallium nitrides
High current
Logic gates
MOSFET
MOSFETs
Power semiconductor devices
Substrates
Switches
Switching
Trenches
vertical transistors
Voltage
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Summary:In this paper, we demonstrate 1.2 kV-class vertical GaN trench MOSFETs fabricated on a bulk GaN substrate with high current and switching operations. The fabricated multi-cell MOSFET achieved a blocking voltage of 1.3 kV by using a field-plate edge termination around an isolation mesa. The MOSFET chip with the size of 1.5 mm × 1.5 mm operates at current rating of as high as 23.2 A with fast switching characteristics. To our knowledge, this is the first report for vertical GaN-based transistors with a high current operation exceeding 10 A and dynamic characteristics.
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SourceType-Conference Papers & Proceedings-2
ISSN:1946-0201
DOI:10.1109/ISPSD.2016.7520877