Multiple Cell Upset Mechanisms in SRAMs

New experimental results using both ion and laser facilities are presented to analyse four multiple cell upset (MCU) mechanisms in SRAMs. Equations describing basic MCU mechanisms were provided.

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Bibliographic Details
Published in2015 15th European Conference on Radiation and Its Effects on Components and Systems (RADECS) pp. 1 - 5
Main Authors Chumakov, Alexander I., Sogoyan, Armen V., Boruzdina, Anna B., Smolin, Anatoly A., Pechenkin, Alexander A.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.09.2015
Subjects
Boundary conditions
Integrated circuits
Junctions
Radiation effects
Random access memory
Scattering
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Summary:New experimental results using both ion and laser facilities are presented to analyse four multiple cell upset (MCU) mechanisms in SRAMs. Equations describing basic MCU mechanisms were provided.
ISBN:9781509002320
1509002324
DOI:10.1109/RADECS.2015.7365638