A 70-80 GHz Image Rejection Resistive Mixer using 0.1um GaAs pHEMT Technology

This paper presents a MMIC image rejection resistive mixer in 70-80 GHz frequency range. The WIN (WIN Semi-conductors Corp.) 0.1 um GaAs pHEMT technology provides W-band high performance FET under high power. The mixer uses Hartley topology and takes advantage of the high linearity of the resistive...

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Bibliographic Details
Published in2023 IEEE MTT-S International Wireless Symposium (IWS) pp. 1 - 3
Main Authors Yu, Boguang, Yu, Ping, Xu, Jie, Guo, Jian, Xu, Zhengbin, Qian, Cheng
Format Conference Proceeding
LanguageEnglish
Published IEEE 14.05.2023
Subjects
Field effect transistors
Gallium arsenide
Hartley topology
image rejection mixer
Linearity
Mixers
MMIC
PHEMTs
resistive FET mixer
Topology
Wireless communication
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Summary:This paper presents a MMIC image rejection resistive mixer in 70-80 GHz frequency range. The WIN (WIN Semi-conductors Corp.) 0.1 um GaAs pHEMT technology provides W-band high performance FET under high power. The mixer uses Hartley topology and takes advantage of the high linearity of the resistive cold-FET. Within 70-80 GHz, the input third-order inter-modulation point (IIP3) is higher than 21 dBm and the conversion loss is lower than 11.9 dB. The LO-RF isolation is higher than 30 dB above 72GHz and the image rejection ratio is above 20 dBc.
DOI:10.1109/IWS58240.2023.10222910