Comprehensive Study of Optical Float-Zone Grown Gallium Oxide Schottky Barrier Diode

• Published in: 2023 9th IEEE India International Conference on Power Electronics (IICPE) pp. 1 - 6
• Main Authors: Sahoo, Jyotiranjan, Vijayakumar, P., Saquib, Taha, Suganya, M., Ganesamoorthy, S., Muralidharan, Rangarajan, Nath, Digbijoy N
• Format: Conference Proceeding
• Language: English
• Published: IEEE 28.11.2023
• Subjects: Lateral Schottky barrier diode (SBD); Optical device fabrication; Optical float-zone grown β-Ga 2 O 3; Reverse leakage current modeling; Schottky barriers; Schottky diodes; Temperature dependence; Temperature distribution; Thermionic emission; trench isolation; Voltage
• ISSN: 2160-3170
• DOI: 10.1109/IICPE60303.2023.10474927

β-Ga 2 O 3 based lateral Schottky barrier diodes are fabricated using Ni/Au as Schottky contact and Ti/Au as Ohmic contact. The Sn-doped β-Ga 2 O 3 sample is grown by the optical float-zone technique. The effect of trenches, which are used for mesa isolation, on break-down voltage is investigated. The device shows near-ideal characteristics in terms of built-in potential. The parasitic series and shunt resistance are extracted, and their dependency on temperature is established. Comprehensive modeling of temperature-dependent reverse leakage current is demonstrated using the thermionic emission (TE) model, Poole-Frenkel (PF) emission model, and Fowler-Nordheim (FN) tun-neling mechanism. The procedure to extract relevant parameters is explained in terms of bias and temperature dependency. The combined model shows excellent agreement with experimental data over a wide range of bias and temperature. The maximum electric field of 2.3 MV/cm is achieved.