Development of MFMIS Gatestack with Thick Hafnium Zirconium Oxide (HZO) for Nonvolatile Memory Application

In this work, a thick HZO-based gate device is examined for memory applications owing to its wider memory window. The TiN - HZO- TiN film layers are demonstrated by measuring electrical properties such as polarization, capacitance, and current. In addition, to apply a thick HZO stack to an integrate...

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Published in2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) pp. 1 - 3
Main Authors Kang, Bohyeon, Park, Jongseo, Hwang, Junghyeon, Lee, Sangho, Shin, Hunbeom, An, Jehyun, You, Hyunseo, Ahn, Sung-Min, Jeon, Sanghun, Baek, Rock-Hyun
Format Conference Proceeding
LanguageEnglish
Published IEEE 07.03.2023
Subjects
etching
gate
Hafnium
integration
Logic gates
memory
memory window
Nonvolatile memory
RNA
Silicon compounds
thick HZO
Tin
Zirconium
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Abstract In this work, a thick HZO-based gate device is examined for memory applications owing to its wider memory window. The TiN - HZO- TiN film layers are demonstrated by measuring electrical properties such as polarization, capacitance, and current. In addition, to apply a thick HZO stack to an integrated memory device, we develop an MFMIS etching process and define a gate structure with a sufficient memory window of 4 V.
AbstractList In this work, a thick HZO-based gate device is examined for memory applications owing to its wider memory window. The TiN - HZO- TiN film layers are demonstrated by measuring electrical properties such as polarization, capacitance, and current. In addition, to apply a thick HZO stack to an integrated memory device, we develop an MFMIS etching process and define a gate structure with a sufficient memory window of 4 V.
Author Kang, Bohyeon
You, Hyunseo
Hwang, Junghyeon
Park, Jongseo
Lee, Sangho
An, Jehyun
Ahn, Sung-Min
Shin, Hunbeom
Baek, Rock-Hyun
Jeon, Sanghun
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  givenname: Jongseo
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  organization: Korea Advanced Institute of Science & Technology (KAIST), Electrical Engineering,Daejeon,Republic of Korea,34141
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  givenname: Sung-Min
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  organization: Pohang University of Science and Technology (POSTECH), Electrical Engineering,Pohang,Gyeongbuk,Republic of Korea,37673
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  givenname: Sanghun
  surname: Jeon
  fullname: Jeon, Sanghun
  organization: Korea Advanced Institute of Science & Technology (KAIST), Electrical Engineering,Daejeon,Republic of Korea,34141
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  givenname: Rock-Hyun
  surname: Baek
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  organization: Pohang University of Science and Technology (POSTECH), Electrical Engineering,Pohang,Gyeongbuk,Republic of Korea,37673
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Snippet In this work, a thick HZO-based gate device is examined for memory applications owing to its wider memory window. The TiN - HZO- TiN film layers are...
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SubjectTerms etching
gate
Hafnium
integration
Logic gates
memory
memory window
Nonvolatile memory
RNA
Silicon compounds
thick HZO
Tin
Zirconium
Title Development of MFMIS Gatestack with Thick Hafnium Zirconium Oxide (HZO) for Nonvolatile Memory Application
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