Development of MFMIS Gatestack with Thick Hafnium Zirconium Oxide (HZO) for Nonvolatile Memory Application

In this work, a thick HZO-based gate device is examined for memory applications owing to its wider memory window. The TiN - HZO- TiN film layers are demonstrated by measuring electrical properties such as polarization, capacitance, and current. In addition, to apply a thick HZO stack to an integrate...

Full description

Saved in:
Bibliographic Details
Published in2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) pp. 1 - 3
Main Authors Kang, Bohyeon, Park, Jongseo, Hwang, Junghyeon, Lee, Sangho, Shin, Hunbeom, An, Jehyun, You, Hyunseo, Ahn, Sung-Min, Jeon, Sanghun, Baek, Rock-Hyun
Format Conference Proceeding
LanguageEnglish
Published IEEE 07.03.2023
Subjects
etching
gate
Hafnium
integration
Logic gates
memory
memory window
Nonvolatile memory
RNA
Silicon compounds
thick HZO
Tin
Zirconium
Online AccessGet full text

Cover

More Information
Summary:In this work, a thick HZO-based gate device is examined for memory applications owing to its wider memory window. The TiN - HZO- TiN film layers are demonstrated by measuring electrical properties such as polarization, capacitance, and current. In addition, to apply a thick HZO stack to an integrated memory device, we develop an MFMIS etching process and define a gate structure with a sufficient memory window of 4 V.
DOI:10.1109/EDTM55494.2023.10102929