Demonstration of Fundamental Characteristics for Power Switching Application in Planer Type E-mode MOS-HEMT Using Normally Depleted AlGaN GaN Epitaxial Layer On Si Substrate

Planer-type HEMTs using fully depleted AlGaN/GaN epitaxial layers called EID (Extrinsically electron Induced by Dielectric) AlGaN/GaN MOS-HEMTs are expected to be stable and reliable E-mode operation thanks to its damage-less fabrication process. Fundamental characteristics of the EID-HEMTs for powe...

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Published in2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD) pp. 223 - 226
Main Authors Nanjo, T., Yamamoto, S., Imazawa, T., Kiyoi, A., Shinagawa, T., Watahiki, T., Miura, N., Furuhashi, M., Nishikawa, K., Egawa, T.
Format Conference Proceeding
LanguageEnglish
Published IEEE 28.05.2023
Subjects
2DEG
AlGaN
EID
Epitaxial layers
GaN
HEMT
high-power
MOS
planer
Power semiconductor devices
Semiconductor device reliability
Silicon
Switches
switching
Threshold voltage
Wide band gap semiconductors
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Summary:Planer-type HEMTs using fully depleted AlGaN/GaN epitaxial layers called EID (Extrinsically electron Induced by Dielectric) AlGaN/GaN MOS-HEMTs are expected to be stable and reliable E-mode operation thanks to its damage-less fabrication process. Fundamental characteristics of the EID-HEMTs for power switching applications were investigated in this study. The fabricated EID-HEMTs exhibited E-mode operation with threshold voltage of 0.5 V, on-resistance of 210\ \mathrm{m}\Omega and break-down voltage of 1.1 kV. Furthermore, clear 400 V/10 A switching operation without any harmful symptoms was also demonstrated.
ISSN:1946-0201
DOI:10.1109/ISPSD57135.2023.10147503