Reducing Impact of Stress on Coupling Coefficient in 30% Scandium Aluminum Nitride Films

Adding Scandium (Sc) to the aluminum nitride (AlN) is widely used to significantly increase coupling coefficient in Piezo-MEMS devices [1] , [2] and [3] . Stress impact on the coupling coefficient in 30% Sc films is a major issue [4] , [5] . Stress variation across wafer and over the target life is...

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Bibliographic Details
Published in2023 Joint Conference of the European Frequency and Time Forum and IEEE International Frequency Control Symposium (EFTF/IFCS) pp. 1 - 2
Main Authors Mishin, Sergey, Oshmyansky, Yury
Format Conference Proceeding
LanguageEnglish
Published IEEE 15.05.2023
Subjects
aluminum nitride
coupling coefficient
Couplings
film stress
High-voltage techniques
III-V semiconductor materials
Scandium
Stress
Time-frequency analysis
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Summary:Adding Scandium (Sc) to the aluminum nitride (AlN) is widely used to significantly increase coupling coefficient in Piezo-MEMS devices [1] , [2] and [3] . Stress impact on the coupling coefficient in 30% Sc films is a major issue [4] , [5] . Stress variation across wafer and over the target life is a major hurdle to keeping coupling coefficient in the range acceptable for most RF filter applications. We have developed a process that uses high voltage surface treatment in conjunction with optimized AlN barrier layer to make coupling coefficient less sensitive to stress in the film.
ISSN:2327-1949
DOI:10.1109/EFTF/IFCS57587.2023.10272231