Graphene Based Field Effect Transistor with Chemical Free p-Type Channel Doping

• Published in: 2023 IEEE Research and Applications of Photonics in Defense Conference (RAPID) pp. 1 - 2
• Main Authors: Sheremet, Volodymyr, Rabbe, Md Fazle, Avrutin, Vitaliy, Ozgur, Umit, Dhar, Nibir K.
• Format: Conference Proceeding
• Language: English
• Published: IEEE 01.09.2023
• Subjects: Charge carrier density; Doping; Fabrication; field effect transistor; Field effect transistors; Graphene; Modulation; p-type doping; Photodetectors

This paper reports transport properties for \text{Al}_2 \mathbf{O}_3 and \text{SiO}_{2} encapsulated graphene bilayer with strain defined sheet carrier density and mobility of 1.65\cdot 10^{13} \text{cm}^{-2} and 1275 \text{cm}^{2}\mathrm{V}^{-1}\mathrm{s}^{-1} for \text{Al}_{2}\mathrm{O}_{3} and 0....