Graphene Based Field Effect Transistor with Chemical Free p-Type Channel Doping

This paper reports transport properties for \text{Al}_2 \mathbf{O}_3 and \text{SiO}_{2} encapsulated graphene bilayer with strain defined sheet carrier density and mobility of 1.65\cdot 10^{13} \text{cm}^{-2} and 1275 \text{cm}^{2}\mathrm{V}^{-1}\mathrm{s}^{-1} for \text{Al}_{2}\mathrm{O}_{3} and 0....

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Bibliographic Details
Published in2023 IEEE Research and Applications of Photonics in Defense Conference (RAPID) pp. 1 - 2
Main Authors Sheremet, Volodymyr, Rabbe, Md Fazle, Avrutin, Vitaliy, Ozgur, Umit, Dhar, Nibir K.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.09.2023
Subjects
Charge carrier density
Doping
Fabrication
field effect transistor
Field effect transistors
Graphene
Modulation
p-type doping
Photodetectors
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Summary:This paper reports transport properties for \text{Al}_2 \mathbf{O}_3 and \text{SiO}_{2} encapsulated graphene bilayer with strain defined sheet carrier density and mobility of 1.65\cdot 10^{13} \text{cm}^{-2} and 1275 \text{cm}^{2}\mathrm{V}^{-1}\mathrm{s}^{-1} for \text{Al}_{2}\mathrm{O}_{3} and 0.96 \cdot 10^{13} \text{cm}^{-2} and 795 \text{cm}^2 \text{~V}^{-1} \mathbf{s}^{-1} for \text{SiO}_{2} respectively that were used for the FET fabrication.
ISSN:2836-6832
DOI:10.1109/RAPID54473.2023.10264780