Enhancement the efficiency of thin AlGaAs based multi-junction Silicon solar cells through doping and thickness profile optimization

• Published in: 2023 International Conference on Recent Advances in Electrical, Electronics, Ubiquitous Communication, and Computational Intelligence (RAEEUCCI) pp. 1 - 6
• Main Authors: Roy, Arijit Bardhan, S, Robin Powell, V, Sabari Vasan, G, Anirudh Srikar
• Format: Conference Proceeding
• Language: English
• Published: IEEE 19.04.2023
• Subjects: Aluminum Gallium Arsenide (AlGaAs); Analytical models; Crystalline Silicon (C-Si); Doping; Gallium arsenide; Multi-junction Solar Cell; PC1d; Performance evaluation; Photovoltaic cells; Simulation; Voltage
• DOI: 10.1109/RAEEUCCI57140.2023.10134005

This paper presents the design and analysis of a crystalline silicon (c-Si) based multijunction solar cell using PC1D simulation software. The multijunction solar cell consists of a c-Si bottom cell and an AlGaAs (aluminum gallium arsenide) top cell, which are connected in series to improve the device efficiency. The layer structure and material properties of the solar cell are optimized using PC1D simulations, and the current-voltage (IV) characteristics, quantum efficiency, and other performance parameters are analyzed. The effects of the thickness and doping concentration of the layers on the device efficiency are investigated, and the optimal values for these parameters are determined. The simulation results show that the c-Si/AlGaAs multijunction solar cell can achieve a maximum efficiency of 22.3% under AM1.5G spectrum. The results demonstrate the potential of multijunction solar cells for achieving high efficiencies and provide insights into the design and optimization of multijunction solar cells using PC1D.