Microfabricated Aluminum Nitride MEMS Resonator

In this paper, a piezoelectric MEMS resonator is presented working as laterally vibrating resonator. The device is microfabricated with the SOI silicon wafer and piezoelectric aluminum nitride (A1N) thin films. The rectangular resonant plate was supported with two beams and the gap from the silicon...

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Bibliographic Details
Published in2023 IEEE 18th International Conference on Nano/Micro Engineered and Molecular Systems (NEMS) pp. 213 - 216
Main Authors Zhang, Yuxin, Feng, Tianren, Chen, Hui, Chai, Yangyang, Wu, Yuxuan, Yuan, Quan
Format Conference Proceeding
LanguageEnglish
Published IEEE 14.05.2023
Subjects
AlN
Electrodes
IDEs electrodes
Micromechanical devices
Piezoelectric films
piezoelectric MEMS resonator
Q-factor
Radio frequency
Resonant frequency
Silicon
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Summary:In this paper, a piezoelectric MEMS resonator is presented working as laterally vibrating resonator. The device is microfabricated with the SOI silicon wafer and piezoelectric aluminum nitride (A1N) thin films. The rectangular resonant plate was supported with two beams and the gap from the silicon substrate is 2 \mum. Molybdenum (Mo) interdigitated electrodes (IDEs) is fabricated on the top of A1N piezoelectric film. The resonant frequency of the resonator is 276 MHz, Q factor is 362.
ISSN:2474-3755
DOI:10.1109/NEMS57332.2023.10190879