Event-Triggered Gate Drive for a 1.7 kV Si-SiC Hybrid Switch with IGBT-like Short-Circuit Robustness

A novel event-triggered gate drive for a Si-SiC hybrid switch is proposed and validated with measurements. The hybrid switch consists of paralleled Si-IGBT and SiC-MOSFET and requires a dedicated gate drive strategy to efficiently combine both semiconductor technologies. The proposed gate driver pro...

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Bibliographic Details
Published in2023 25th European Conference on Power Electronics and Applications (EPE'23 ECCE Europe) pp. 1 - 9
Main Authors Kayser, Felix, Eckel, Hans-Gunter
Format Conference Proceeding
LanguageEnglish
Published EPE Association 04.09.2023
Subjects
Driver concepts
Hybrid
IGBT
Insulated gate bipolar transistors
Logic gates
MOSFET
Multichip modules
Short circuit
SiC MOSFET
Silicon carbide
Switches
Switching loss
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Summary:A novel event-triggered gate drive for a Si-SiC hybrid switch is proposed and validated with measurements. The hybrid switch consists of paralleled Si-IGBT and SiC-MOSFET and requires a dedicated gate drive strategy to efficiently combine both semiconductor technologies. The proposed gate driver provides zero-voltage switching for the SiC MOSFET for decreased switching losses. By driving both switches out of only one external gate signal, it allows the usage of a standard power module housing for a hybrid switch. Triggering the turn-on of the SiC-MOSFET only at low V CE , the gate driver ensures an IGBT-like short-circuit behavior of the hybrid switch. Therefore a non-robust SiC MOSFET with reduced R ds,on can be used.
DOI:10.23919/EPE23ECCEEurope58414.2023.10264623