Applications of SiC MESFETs and GaN HEMTs in power amplifier design

Very high power densities have been shown for both SiC MESFET and GaN HEMT devices. Both of these active devices benefit from the high breakdown voltages afforded by their wide-bandgap semiconductor properties. The GaN device also benefits from current densities as high as 1 A/mm. This high power de...

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Published in2002 IEEE MTT-S International Microwave Symposium Digest (Cat. No.02CH37278) Vol. 3; pp. 1819 - 1822 vol.3
Main Authors Pribble, W.L., Palmour, J.W., Sheppard, S.T., Smith, R.P., Allen, S.T., Smith, T.J., Ring, Z., Sumakeris, J.J., Saxler, A.W., Milligan, J.W.
Format Conference Proceeding Journal Article
LanguageEnglish
Published IEEE 2002
Subjects
Broadband amplifiers
Current density
Gallium nitride
HEMTs
High power amplifiers
Linearity
MESFETs
MODFETs
Power amplifiers
Silicon carbide
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Summary:Very high power densities have been shown for both SiC MESFET and GaN HEMT devices. Both of these active devices benefit from the high breakdown voltages afforded by their wide-bandgap semiconductor properties. The GaN device also benefits from current densities as high as 1 A/mm. This high power density, along with good efficiency and linearity, provide an excellent base for future military and commercial power amplifier applications. High power densities are possible using narrow band power-matching networks. Although the gain-bandwidth limitation is exacerbated due to the high-impedance load lines required, high power design is possible even over multi-octave bandwidths.
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ISBN:9780780372399
0780372395
ISSN:0149-645X
2576-7216
DOI:10.1109/MWSYM.2002.1012216