AlGaN/GaN HEMTs on Silicon With a Graded-AlGaN Back-Barrier for RF Applications

In this study, we report on the electrical characteristics of AlGaN/GaN HEMT fabricated on a GaN-on-Si buffer scheme with a reverse-graded AlGaN back-barrier. Transistors exhibited a maximum DC drain current of 0.8 A/mm with a peak transconductance of 280 mS/mm. Devices exhibited off-state breakdown...

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Bibliographic Details
Published in2022 IEEE International Conference on Emerging Electronics (ICEE) pp. 1 - 4
Main Authors Gowrisankar, Aniruddhan, Vanjari, Sai Charan, Bardhan, Abheek, Venugopalarao, Anirudh, Chandrasekar, Hareesh, Muralidharan, Rangarajan, Raghavan, Srinivasan, Nath, Digbijoy N.
Format Conference Proceeding
LanguageEnglish
Published IEEE 11.12.2022
Subjects
back-barrier
Current measurement
GaN-on-Si
HEMT
HEMTs
Power measurement
Pulse measurements
Radio frequency
Silicon
Wide band gap semiconductors
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Summary:In this study, we report on the electrical characteristics of AlGaN/GaN HEMT fabricated on a GaN-on-Si buffer scheme with a reverse-graded AlGaN back-barrier. Transistors exhibited a maximum DC drain current of 0.8 A/mm with a peak transconductance of 280 mS/mm. Devices exhibited off-state breakdown voltage greater than 100V, indicating good channel control even without compensation dopants. The current collapse in these devices was approximately 12% under drain-lag pulsed-IV measurements, indicating minimal trapping in this buffer scheme. RF small-signal measurements yielded peak f t /f max figures of 31/72 GHz, respectively. A peak output power of 2.36 W/mm was obtained in pulsed load-pull measurements at 4 GHz with a Power-Added-Efficiency (PAE) of 18.1%.
DOI:10.1109/ICEE56203.2022.10118188