A Simple Analytical Model for The Reverse-Recovery Overvoltage and Oscillation In a SiC MOSFET Half-Bridge Module

The paper introduces a simple analytical model for the overvoltage and the oscillation on the body's diode of the SiC MOSFET module during its reverse-recovery. The model provides a precise estimation of the overvoltage and the oscillation which can be used for overvoltage protection or the tur...

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Bibliographic Details
Published in2023 25th European Conference on Power Electronics and Applications (EPE'23 ECCE Europe) pp. 1 - 6
Main Authors Trieu To, Pham Ha, Eckel, Hans-Gunter
Format Conference Proceeding
LanguageEnglish
Published EPE Association 04.09.2023
Subjects
Analytical model
Analytical models
Diode
Europe
Modelling
MOSFET
Power electronics
Reverse Recovery
Semiconductor device modeling
SiC MOSFET
Silicon carbide
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Summary:The paper introduces a simple analytical model for the overvoltage and the oscillation on the body's diode of the SiC MOSFET module during its reverse-recovery. The model provides a precise estimation of the overvoltage and the oscillation which can be used for overvoltage protection or the turn-on losses and oscillation optimization.
DOI:10.23919/EPE23ECCEEurope58414.2023.10264503