A Ka-band 4 Watt Power Amplifier MMIC Employed GaAs PHEMT Progress
In this work, a Ka-band 4 watt power amplifier MMIC has been designed and fabricated based on a commercial 0.15µm GaAs pHEMT progress. For obtaining high power gain, three-stage structure, including four part matching networks was used for the MMIC design. Finally, the S-parameter measured on-line r...
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Published in | 2023 International Conference on Microwave and Millimeter Wave Technology (ICMMT) pp. 1 - 3 |
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Main Authors | , , |
Format | Conference Proceeding |
Language | English |
Published |
IEEE
14.05.2023
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Subjects | |
Online Access | Get full text |
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Summary: | In this work, a Ka-band 4 watt power amplifier MMIC has been designed and fabricated based on a commercial 0.15µm GaAs pHEMT progress. For obtaining high power gain, three-stage structure, including four part matching networks was used for the MMIC design. Finally, the S-parameter measured on-line results show a linear gain of 23dB to 27dB and an input return loss of -15dB to -12dB from 25GHz to 31GHz. In large-signal measurements, the results demonstrate maximum output power of 4.6 watt, associated with 21dB power gain and maximum power added efficiency of 35%, respectively. |
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DOI: | 10.1109/ICMMT58241.2023.10277370 |