Threshold Voltage Modeling of Carbon Nanotube Field-Effect Transistor (CNTFET)

Analytical modeling equations for characterizing the threshold voltage (V_{th}) of carbon nanotube field effect transistor CNTFETs are presented in this study With chirality. The equations have been derived based on the charge and potential distributions existing between the gate and substrate in a...

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Bibliographic Details
Published in2023 International Semiconductor Conference (CAS) pp. 153 - 156
Main Authors Shakil, S M, Ullah, Muhammad S.
Format Conference Proceeding
LanguageEnglish
Published IEEE 11.10.2023
Subjects
Carbon nanotubes
Chiral Vector
Chirality
CNTFET
CNTFETs
Mathematical models
Reliability theory
Semiconductor device modeling
Threshold voltage
Visualization
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Summary:Analytical modeling equations for characterizing the threshold voltage (V_{th}) of carbon nanotube field effect transistor CNTFETs are presented in this study With chirality. The equations have been derived based on the charge and potential distributions existing between the gate and substrate in a CNTFET. The research demonstrates a significant correlation between the chiral vectors of carbon nanotubes (CNTs) and their threshold voltage (V_{th}). The findings indicate a high level of coexistence between mathematical and visual simulation methodologies. The findings indicate that the determined threshold voltage (V_{th}) of a carbon nanotube field-effect transistor (CNTFET) possessing a chiral vector of (7, 2) exhibits a high degree of agreement with the relevant literature.
ISSN:2377-0678
DOI:10.1109/CAS59036.2023.10303671