Double Modulation Simplified Space Vector PWM for Split Output Three-Level T-Type Inverters

The use of high-frequency and wide-bandgap semiconductor switching devices further improves the performance of inverters. In this paper, a split-output T-type three-level inverter using SiC MOSFET devices is proposed based on the conventional T-type three-level inverter. The simulation verification...

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Bibliographic Details
Published in2023 5th International Conference on Power and Energy Technology (ICPET) pp. 295 - 299
Main Authors Zhao, Tianrun, Chen, Haoming, Zhang, Zixu, Guo, Longzhen
Format Conference Proceeding
LanguageEnglish
Published IEEE 27.07.2023
Subjects
dead-time
DMS-SVPWM
Fluctuations
MOSFET
Performance evaluation
Pulse width modulation
SiC MOSFET
Silicon carbide
simplified SVPWM
Switches
Switching frequency
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Summary:The use of high-frequency and wide-bandgap semiconductor switching devices further improves the performance of inverters. In this paper, a split-output T-type three-level inverter using SiC MOSFET devices is proposed based on the conventional T-type three-level inverter. The simulation verification shows that the adoption of double-modulation simplified space vector pulsewidth modulation (DMS-SVPWM) can reduce the influence of dead-time on inverter output. It demonstrates that the proposed DMS-SVPWM can significantly improve the output current quality of the split-output T-type three-level inverter.
DOI:10.1109/ICPET59380.2023.10367580