Comparison of Drain Current Transient Characteristics of AlGaN/GaN HEMTs in the Linear and Saturation Regions after OFF-state Stress

This work presents drain current transient characteristics of AlGaN/GaN HEMTs in the linear and saturation regions after OFF-state stress. Due to the various RF input power and DC quiescent point, a broad range sweep happens for switching-mode RF power amplifier application. As the device switches f...

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Bibliographic Details
Published in2023 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia) pp. 1 - 4
Main Authors Cho, Chih-Wei, Hsin, Yue-Ming
Format Conference Proceeding
LanguageEnglish
Published IEEE 27.08.2023
Subjects
Asia
current dispersion
GaN
HEMTs
MODFETs
Radio frequency
Transient analysis
trapping
Tunneling
Wide band gap semiconductors
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Summary:This work presents drain current transient characteristics of AlGaN/GaN HEMTs in the linear and saturation regions after OFF-state stress. Due to the various RF input power and DC quiescent point, a broad range sweep happens for switching-mode RF power amplifier application. As the device switches from OFF-state stress into an ON-state linear region, the temperature dependence of the de-trapping is observed in this work. A single trap with an activation energy (EA) of around 0.52 eV is extracted for the device. On the contrary, the device switches from OFF-state stress into an ON-state in the saturation region, and the de-trapping mechanism is dominated by electric field-assisted tunneling. In addition, the trap (\sim0.52eV) is added to the buffer layer in Silvaco TCAD simulation to verify the observation. By this method, it is possible to estimate the trap density to correlate with the experiment.
ISSN:2831-3712
DOI:10.1109/WiPDAAsia58218.2023.10261923