Test Methodology Development for Investigating CeRAM at Elevated Temperatures

Abstract-Correlated electron RAM (CeRAM) device test structures utilizing C-doped NiO were fabricated and electrically characterized to determine functionality in extreme environments. CeRAM devices were demonstrated to repeatedly cycle at temperatures up to 200°C while maintaining a substantial mem...

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Bibliographic Details
Published in2023 35th International Conference on Microelectronic Test Structure (ICMTS) pp. 1 - 4
Main Authors Gruszecki, A. A., Prasad, R., Suryavanshi, S. V., Yeric, G., Young, C. D.
Format Conference Proceeding
LanguageEnglish
Published IEEE 27.03.2023
Subjects
Leakage currents
Microelectronics
Performance evaluation
Random access memory
Resistance
Temperature
Temperature dependence
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Summary:Abstract-Correlated electron RAM (CeRAM) device test structures utilizing C-doped NiO were fabricated and electrically characterized to determine functionality in extreme environments. CeRAM devices were demonstrated to repeatedly cycle at temperatures up to 200°C while maintaining a substantial memory window of over 1000 x. Careful selection of compliance current when sweeping the high resistance state (OFF) is required for optimal device performance. The presence of a temperature dependent leakage current in the OFF state results in reducing OFF resistance at elevated temperatures.
ISSN:2158-1029
DOI:10.1109/ICMTS55420.2023.10094065