IGBT and Free-Wheeling Diode Behavior during the Short Circuit Type III with varied Operation Conditions

In this paper, the interaction between the Insulated Gate Bipolar Transistor (IGBT) and the Free-Wheeling Diode (FWD) in the short circuit type III (SC III) failure has been studied. The influence of the different operation conditions, like the load current and temperature, are investigated. Further...

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Bibliographic Details
Published in2023 25th European Conference on Power Electronics and Applications (EPE'23 ECCE Europe) pp. 1 - 10
Main Authors Liu, Xing, Li, Xupeng, Lutz, Josef, Fuhrmann, Jan, Eckel, Hans-Gunter, Basler, Thomas
Format Conference Proceeding
LanguageEnglish
Published EPE Association 04.09.2023
Subjects
Behavioral sciences
Dynamic Avalanche
Free-wheeling Diode
IGBT
Inductance
Insulated gate bipolar transistors
Logic gates
Packaging
Short Circuit
Silicon
TCAD Simulation
Voltage
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Summary:In this paper, the interaction between the Insulated Gate Bipolar Transistor (IGBT) and the Free-Wheeling Diode (FWD) in the short circuit type III (SC III) failure has been studied. The influence of the different operation conditions, like the load current and temperature, are investigated. Furthermore, external factors such as gate impedance, packaging style, and the different diode technologies are discussed. Since the paralleled diode is in the conducting mode before the short circuit, the plasma inside the bipolar silicon (Si) diode and the reverse recovery behavior play essential roles in the short circuit behavior of the IGBT. Under certain conditions, the short circuit stress of the IGBT can be minor and the diode enters the regime of the dynamic avalanche. Moreover, TCAD simulations have been carried out to analyze the internal behavior of IGBT and diode during the SC type III event.
DOI:10.23919/EPE23ECCEEurope58414.2023.10264389