Charge Pump Based Gate Driver Integrated Circuit for SiC MOSFET

Silicon Carbide (SiC) MOSFET has become the mainstream power device for applications having a high voltage, high temperature operating circumstance such as electric vehicle. To exploit the advantages of SiC MOSFET, a welldesigned gate driver is mandatory, whose design challenges have trade-offs amon...

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Bibliographic Details
Published in2023 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia) pp. 1 - 4
Main Authors Jiang, Mao-Hong, Wu, Chan-Liang, Huang, Chung-Hsun
Format Conference Proceeding
LanguageEnglish
Published IEEE 27.08.2023
Subjects
Asia
Charge Pump
Charge pumps
Density measurement
Gate Drive
Integrated Circuit
Integrated circuits
MOSFET
Power system measurements
SiC MOSFET
Silicon carbide
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Summary:Silicon Carbide (SiC) MOSFET has become the mainstream power device for applications having a high voltage, high temperature operating circumstance such as electric vehicle. To exploit the advantages of SiC MOSFET, a welldesigned gate driver is mandatory, whose design challenges have trade-offs among switching speed, noise generation and reliability. Generally, a gate driver is composed of discrete components with occupying a large footprint, while possibly inducing parasitic side-effects and lowering power density. Thus, we demonstrate a gate driver integrated circuit with integrating a self-timing charge pump circuit on chip. Physical design considerations were also raised in this paper to eliminate the occurrence of Latch-up, IR drop, Electromigration, and ESD problems. A charge pump gate driver (CPGD) integrated circuit (IC) is designed, implemented and fabricated using TSMC 0. 1S\mum70V Technology, in which demonstrates a very small die footprint of 3 mm 2 while achieving a significant improvement in switching transient speed over a conventional gate driver design.
ISSN:2831-3712
DOI:10.1109/WiPDAAsia58218.2023.10261932